HBM4

KAIST has a roadmap projecting the evolution of high-bandwidth memory from HBM4 to HBM8 through 2038, detailing major gains in bandwidth, capacity, I/O width, power, and even system architecture.

Micron has become the first DRAM vendor to begin sampling 36GB HBM4 memory with a 2048-bit interface and 2TB/s bandwidth.

Samsung plans to adopt hybrid bonding for HBM4 to improve thermal and interface performance, potentially gaining a competitive edge over SK hynix, which may delay its use due to costs concerns.

HBM4 offers faster data rates, more channels, and higher memory capacities, with features like Directed Refresh and flexible voltage options to boost performance and reliability.

Micron's 1γ fabrication technology with EUV, new HKMG, and BEOL promises to increase performance while cutting power consumption for DRAM.

SanDisk talks high bandwidth flash memory that promises to wed HBM bandwidth with 3D NAND capacity.

Sales of AI memory solutions, including HBM3 and eSSDs, drove SK hynix's revenues and profits to record levels.

Micron to expand HBM3E and HBM4 output when its HBM assembly facility in Singapore start operations in 2026.

TSMC's CoWoS gets even bigger with 9-reticle size packages due in 2027.

SK hynix to deliver HBM4 memory to Nvidia about half of a year ahead of planned schedule.